Optical communication system with multiple photonic integrated circuit (PIC) chips and an external booster optical amplifier for photonic integrated circuits (PICs)

ABSTRACT

A C- and/or L-band booster optical amplifier is utilized in an optical communication system at the output of one or more semiconductor transmitter photonic integrated circuit (TxPIC) chips or the optical combined outputs of multiple semiconductor transmitter photonic integrated circuit (TxPIC) chips employed in an optical communication module, the deployment of integrated semiconductor optical amplifiers (SOAs) on the TxPIC chips can be eliminated. This would reduce both the complexity in designing and fabricating these chips as well as reducing the power consumption of the TxPIC chips. The deployment of such a Tx booster optical amplifier would also take into consideration the nonlinear effects of difficult high loss single mode fiber (SMF) or other fiber type links by allowing a higher power per channel to be achieved compared to the case where channel amplification is attempted solely on the TxPIC chip.

CROSS-REFERENCE TO RELATED APPLICATION

[0001] This application is a division of U.S. patent application Ser.No. 10/285,936, filed Oct. 31, 2002 which claims priority of U.S.provisional application Ser. No. 60/346,044, filed Nov. 6, 2001, whichapplications are incorporated herein by its reference.

BACKGROUND OF THE INVENTION

[0002] 1. Field of the Invention

[0003] This invention relates generally to optical telecommunicationmodules which include one or more photonic integrated circuit (PIC)chips and more particularly to the deployment of one or more of such PICchips with an off-chip booster optical amplifier to boost themultiplexed channel signal output of the chip or chips.

[0004] 2. Field of the Invention

[0005] Semiconductor photonic integrated circuit (PIC) chip architecturehas recently been developed at Infinera Corporation comprising multipletransmitter or receiver channels, or both, formed on a singlesemiconductor chip optically coupled with an optical combiner whichprovides an off-chip output of plural multiplexed channel signals. Thisarchitecture includes one or more photonic integrated circuits (PICs) ona single chip, such as an InP chip using, for example, InGaAsP/InP orInAlGaAs/InP alloys. These monolithic chips are called transmitterphotonic integrated circuits (TxPICs) or receiver photonic integratedcircuits (RxPICs). The TxPIC chips include multiple signal channels ofdifferent wavelengths which approximate a standardized wavelength grid,such as the ITU grid, and the number of channels on any one PIC chip mayrange, for example, from 8 channels to 40 channels. Each chip,therefore, includes a plurality of signal channels or optical channelpaths with each path comprising a DFB or DBR laser source followed byand electro-optic (EO) modulator, such as an electro-absorption (EA)modulator or a Mach-Zehnder (M-Z) modulator and, possibly, followed byan optional semiconductor optical amplifier (SOA) and/or photodetector(PD), such as a PIN photodiode or an avalanche photodiode (APD). Themodulated optical signals from the multiple channel paths are launchedinto an optical combiner, having inputs optically coupled with each ofthe channel paths. The optical combiner is preferably awavelength-selective optical combiner, such as, an Echelle grating or anarray waveguide array (AWG). However, it may also be a power combiner,such as a star coupler or an multi-mode interference (MMI) coupler. AnAWG type of optical combiner is preferred because of its low insertionlosses. The multiplex channel signals are, then, passed, via an on-chipoutput waveguide from the optical combiner, to an exit port on the chipwhere the multiplexed channel output is optically coupled to a fibertransmission link. The output waveguide may also include a modeconverter. Further details relating to this type of TxPIC architecturecan be found in U.S. patent application Ser. No. 10/267,331; Ser. No.10/267,330; and Ser. No. 10/267,346, all filed on Oct. 8, 2002, whichpatent applications are incorporated herein by their reference.

[0006] In the deployment of multiple TxPIC chips at the opticalcommunication module level, it is necessary to optically combine theoutputs from multiple TxPIC chips for launching them on a fibertransmission link. In order to perform this function, it has beenproposed that in order to effectively accomplish this function to employwavelength-selective multiplexing components that comprise a pluralityof four-port interleavers and band combining dichroic filters to combinethe multiplexed outputs of multiple TxPIC chips. These components, whilepresently available, are highly expensive and also suffer from highyield issues due to their complexity and newness in development anddeployment.

SUMMARY OF THE INVENTION

[0007] According to one feature of this invention, an opticalcommunication system comprises at least one monolithic semiconductorphotonic integrated circuit chip having a plurality of communicationsignal channels formed on the chip, each of the signal channelsincluding at least one active optical component optically coupled with ameans to either optically combine or decombine channel signals on thesemiconductor chip. A booster optical amplifier is optically coupled toa port on the chip to amplify channel signals to be received into ortransmitted out of the chip. The booster optical amplifier can be a lowperformance fiber amplifier, such as, for example, an EDFA, or asemiconductor optical amplifier (SOA), semiconductor laser amplifier, again-clamped-SOA or concatenated amplifiers of any of the foregoingtypes of semiconductor optical amplifiers. One particular example of aPIC chip utilizing such a booster optical amplifier is a semiconductormonolithic transmitter photonic integrated circuit (TxPIC) chip. Thebooster optical amplifier is used instead of deploying semiconductoroptical amplifiers directly integrated on the TxPIC chip to providerequired gain for generated on-chip channel signals. By eliminatingthese integrated gain components fro the PIC chip, the complexity of thePIC chip can be reduced, which translates into less on-chip contacts andless applied current and bias necessary to the chip and,correspondingly, lower on-chip heat generation that must be dissipated.

[0008] A further feature of this invention is the deployment of apassive optical combiner that is a broad bandwidth spectral wavelengthcombiner for combining the outputs from multiples transmitter photonicintegrated circuit (TxPIC) chips and, thereafter, the amplification ofthe combined channel signals with a booster optical amplifier couplebetween the passive optical combiner and the fiber transmission link.The booster optical amplifier may be a rear earth fiber amplifier, suchas an erbium doped fiber amplifier (EDFA), or one or more semiconductoroptical amplifiers (SOAs) on one or more semiconductor chips. Such acombination of optical components simplifies the design of individualTxPICs and other such optical communication PICs, which has to take intoconsideration the nonlinear effects of difficult, high loss single modefiber (SMF) links or other fiber-type links by allowing a higher powerper channel to be achieved compared to the case where channelamplification is attempted directly on the TxPIC chip through thedeployment of on-chip optical amplifiers, such as semiconductor opticalamplifiers (SOAs), integrated in locations following the electro-optic(EO) modulators, if not integrated also at other locations on the samechip.

[0009] By removing the channel signal amplification requirement from theTxPIC chip, the TxPIC design and the amplification required componentsis simplified in several ways. First, the on-chip active opticalcomponents is reduced to the arrays of lasers sources and EO modulators(and possibly at least one array of photodetectors) as well as thepassive optical combiner, thereby lowering on-chip power consumption byas much as 40% and, correspondingly, the amount of on-chip heatgenerated that must be carried away off-chip. Second, the number ofrequired on-chip contacts is reduced. Third, the possible optical and/orthermal interactions of on-chip optical amplifiers with other on-chipactive optical components, such the laser sources and the EO modulators,are eliminated. Fourth, two-photon absorption (TPA) possibly occurringin the optical combiner is significantly reduced if not eliminated.Fifth, the launch power per channel is set by the booster opticalamplifier rather than via any on-chip semiconductor amplifiers so thatthe total launch power for all channels can be adjusted to meet thedifferent loss requirements of different high loss, single mode fiber(SMF) optical spans or links. Sixth, on-chip SOAs in each channel pathcan degrade the extinction ratio of the EO modulators. As a result,operation of the SOAs would have to be sufficiently backed off ofsaturation to prevent such degradation, which may be several dB, whichdefeats, in part, the purpose of providing on-chip amplifiers. Seventh,with no on-chip semiconductor optical amplifiers, any negative impact ofASE noise feedback from such on-chip amplifiers back into on-chipelectro-optic modulators is eliminated. Such ASE feedback wouldsignificantly affect the extinction ratio of the modulators.

[0010] A further advantage of the deployment of a low cost, lowperformance booster optical amplifier at the output of a TxPICsemiconductor chip is that the amplifier, such as in the case of anEDFA, need not be a high performance, expensive optical amplifier and,therefore, providing a significantly cost-effective approach forachieving desired gain per channel. In this regard, the EDFA may be asingle stage EDFA with one pump laser where the amplifier stage is onlya few meters long. This compares to a high performance amplifier thathas multiple stages and two or more pump lasers and is many meters long,such as the type deployed for mid-span optical amplification.

[0011] Also, in the case of multiple PIC chip outputs combined via anoptical combiner, such as a power coupler or a star coupler, thedeployment of an relatively inexpensive optical amplifier at the opticalcombiner output permits the use of a less expensive optical combiner, asopposed to an interleaver or multiplexer, which couplers have nowavelength selective passband effect or guardbands but do experiencehigher optical losses. Thus, an inexpensive optical amplifier followingsuch a broad bandwidth spectral wavelength combiner complements thehigher insertion loss of such a combiner with sufficient per channelgain eliminating the need for a more expensive band interleaver ormultiplexer having passband selective effects although providingcomparatively lower optical losses.

[0012] Other objects and attainments together with a fullerunderstanding of the invention will become apparent and appreciated byreferring to the following description and claims taken in conjunctionwith the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

[0013] In the drawings wherein like reference symbols refer to likeparts:

[0014]FIG. 1 is a schematic plan view of an example of a PIC chip, towit, a TxPIC chip, that may be utilized in the practice of thisinvention.

[0015]FIG. 2 is a schematic side view of the TxPIC shown in FIG. 1.

[0016]FIG. 3 illustrates a first embodiment of this invention.

[0017]FIG. 4 illustrates a second embodiment of this invention.

[0018]FIGS. 5A (Part 1) and 5B (Part 2) illustrate a third embodiment ofthis invention relative to transmission in the C and L bands.

DETAILED DESCRIPTION OF THE INVENTION

[0019] Reference is first made to FIG. 1 illustrating an embodiment ofTxPIC chip 10 for the purpose of later illustrating such a chip or chipsin the embodiments of this invention. Semiconductor chip 10 comprises anarray of DFB or DBR lasers 12 and array of electro-optic (EO) modulators14, such as electro-absorption modulators or Mach-Zehnder modulators,optically coupled via optical waveguides 18 to an optical combinercomprising an arrayed waveguide grating (AWG) 16. As an example, TxPIC10 may have eight optical signal channels with different channelwavelengths from λ₁ to λ₈ forming a wavelength grid substantiallymatching that of a standardized wavelength grid, such as the ITU grid.However, the number of signal channels may be less than or greater thaneight channels, the latter depending upon the ability to spatiallyintegrate an array of semiconductor modulator/lasers (SMLs) 15, i.e.,sets 15 comprising a laser source 12 and modulator 14, while achievingminimal cross-talk levels. AWG 16 is an optical combiner of choicebecause of its capability of providing narrow passbands for therespective channel signals, i.e., it is wavelength selective, andprovides for optimum low insertion loss. AWG 16, as known in the art,comprises an input slab or free space region 20, a plurality of gratingarms 22 of predetermined increasing length, ΔL, and an output slab orfree space region 24. The orientation of the active components of TxPICchip 10 is such that both the laser and modulator arrays are at 90° C.relative to the output waveguides 26 of AWG 16. This PIC architectureoptimally minimizes the amount of unguided stray light generated fromthe SML sets 15 that becomes captured by the AWG output waveguides 26and, therefore, does not appear as noise on the multiplexed channelssignals thereby improving the extinction ratio of the outgoingmultiplexed signals on any one of the waveguides 26. Multiple waveguides26 provide a vernier from which the best overall output in terms ofwavelength grid and power can be chosen from AWG 16. The extinctionratio loss from this stray light may be as much 1 dB. Wavelengthselective combiner 16 may also be an Echelle grating or may be anon-selective wavelength type, such as a power combiner 17, shown laterin FIG. 4. Additional output waveguides 28 and 29 may be provided athigher order Brillouin zones of AWG output slab 24 to couple the higherorder Brillouin zone power to photodetectors 30 and 31 as seen in FIG.3. Photodetectors 30 and 31 may be off-chip integrated photodetectors ormay be on-chip photodetectors as shown in FIG. 3. Photodetectors may bePIN photodiodes or avalanche photodiodes (APDs).

[0020] As shown in FIG. 3, PIN photodiodes 30 and 31 are fabricated inthe higher order +/−Brillouin zones, e.g., the −1 and +1 Brillouin zones28 and 29 of AWG output slab 24. The two photodiodes 30 and 31 are sopositioned to detect on opposite sides of the AWG passband. Each lasersource 12 may be dithered at an identical low frequency or at differentlow frequencies so that each source can be individually identified. Alaser 12 is aligned to the AWG passband when its wavelength is tunedsuch that the two photodiodes 30 and 31 have a balanced AC output, i.e.,outputs of the same magnitude. More generally, a balanced ratio betweenthese photodiodes 30 and 31 can be deployed as a setpoint for areference. As just indicated above, for the purposes of making thispassband test for each laser source 12 on TxPIC chip 10, the lasers maybe each dithered sequentially, one at the time, at the same tonefrequency, or concurrently at different tone frequencies.

[0021] Reference is now made to FIG. 2 which is a cross-sectional viewof an optical channel path in TxPIC chip 10. It should be noted thatFIG. 4 is not drawn to scale, particularly with respective to activeregion 42, which is enlarged, and is presented in this manner to helpexplain the structure. As seen in the cross-sectional view of FIG. 2,there is illustrated a single optical SML path plus optical combinerfield of TxPIC chip 10. Chip 10 comprises an InP substrate 32, such asn-InP or InP:Fe, followed by a cladding layer 34, a Q waveguide layer36, a spacer layer 38 of n-InP, followed by grating layer 40. Gratinglayer 40 includes a grating (not shown) in the section comprising, inthe case here, a DFB laser 12, having a periodicity that provides a peakwavelength at or near the peak wavelength on a standardized wavelengthgrid. Grating layer 40 is followed by layer 41 of n-InP and multiplequantum well region 42 of quantum wells and barriers employing a GroupIII-V quaternary (Q) such as InGaAsP or AlInGaAs. These quaternaries arecollectively referred to as “Q”. These Q layers are deposited deployingSAG using a mask to form the individual DFB bandgaps of their activeregions as well as the bandgaps for the individual modulators 14 so thatwavelengths generated by the DFB laser 12 will be transparent to theindividual modulators 14. Also, the wavelength of the field of opticalcombiner 17 will be shorter than that of the modulators 14. As anexample, the longest bandgap wavelength for an array DFB laser may be1590 nm, its modulator, such as a semiconductor electro-absorptionmodulator (EAM), may have a bandgap wavelength of 1520 nm and the fieldof optical combiner 17 may have a bandgap wavelength of 1360 nm.

[0022] The Q active region 42 and the Q waveguide core 36 layer extendthrough all of the integrated optical components. If desired, DFB lasers12 can be composed of a different active layer structure than the regionof the EAMs 14. In this embodiment, the Q waveguiding layer 36 providesmost of the optical confinement and guiding through each opticalcomponent section of TxPIC chip 10.

[0023] The chip 10 is completed with the growth of non-intentionallydoped (NID) InP layer 44 and cladding layer 46, which is n-InP over theactive components 12 and 14 and NID-InP over optical combiner 17,followed by contact layer 48A comprising p⁺⁺-InGaAs over activecomponents 12 and 14 and a passivation layer 48B over the opticalcombiner field 17. Cladding layer 46 as well as its overlying contactlayer portion is selectively etch away either over the SMLs or over thefield of optical combiner 17 and regrown so that a partition,schematically illustrated at 45, results comprising p-InP portion 46Aand p⁺⁺-InGaAs layer 48A in regions of DFB lasers 12 and EAMs 14 and aNID-InP layer 46B and a passivation layer 48B in region of the field ofoptical combiner 17. The passivation layer 48B may be BCB. The reasonfor this etch and regrowth is to render the optical combiner field 17non-absorbing to the optical channel signals propagating thought thisoptical passive device. More is said and disclosed relative to thismatter in U.S. application Ser. No. 10/267,346, incorporated herein byits reference.

[0024] Chip 10 is completed with appropriate contact pads or electrodes,the p-side electrodes 45 and 47 shown, respectively, for DFB laser 12and EAM 14. If substrate 32 is semiconductive, i.e., n-InP, then ann-side electrode (not shown) is provided on the bottom substrate 32. Ifsubstrate 32 is insulating, e.g., InP:Fe, the electrical contact to then-side is provided through a via (not shown) from the top of the chipdown to n-InP layer 34. The use of a semi-insulating substrate 32provides the advantage of minimizing electrical cross-talk between theintegrated optical components, particularly active electrical componentsin aligned arrays, such as DFB lasers 12 and EAMs 14. Theinter-component spacing between adjacent DFB laser 12 and EAMs 14 may beabout 250 μm or more to minimize cross-talk at data rates of 10 Gbitsper sec.

[0025] Reference is now made to FIG. 3 which illustrates a plurality ofTxPICs 10 of FIG. 1 with their output waveguides 26 coupled to therespective inputs 50(1). 0.50(N) of a N×2 optical combiner 56 which is,in turn, coupled to a single booster optical amplifier 60. It isimportant to note that while multiple TxPIC chips 10 of FIG. 1 or othersuch PIC chip are illustrated in these and other figures, the inventionherein described is equally applicable to a single TxPIC chip 10 withits output coupled to a booster optical amplifier 60 to provide gain tothe multiplexed signal from output waveguide 26 of the chip. FIG. 3illustrates multiple TxPIC chips 10 because the low performance, boosteramplifier 60 is capable of providing gain to more than just thewavelength grid channels of a single PIC chip 10.

[0026] In FIG. 3, only one of the TxPICs 10 is shown in detail. Each ofthe TxPICs 10 has a different group or band of multiplexed channelwavelengths within a standardized grid which are then all combinedtogether via N×2 optical combiner 56. Optical combiner 56 has twooutputs 57 and 59 to allow an extra port for wavelength locking of themultiple laser signal sources in one or multiple TxPIC chips 10. Itshould be noted that more than two optical combiner outputs may beprovided or utilized for the purposes of providing a feedback to awavelength control system for wavelength monitoring and wavelengthlocking one or more TxPIC chips 10 independently of one another. Thisextra optical combiner output port 57 will not affect the insertion lossof the optical combiner. Output 57 provides a small portion (such as 1%to 3%) of the multiplexed groups of output channel signals to wavelengthlocker 58. The additional output port 57 is coupled to a wavelengthlocker 58 to monitor the TxPIC channel signals and provide feedback tomaintain operational wavelengths of their laser sources 12 within thestandardized wavelength grid. For more detail as to wavelength lockers,see U.S. patent application Ser. Nos. 10/267,330 and 10/267,331,incorporated herein by reference. Locker 58 provides information of thewavelength position of each of the laser sources 12 relative to itsdesired operational wavelength on a standardized grid and providesfeedback to laser sources 12 of the respective PIC chips 10 to adjusttheir operating wavelengths to be more approximate to or as close aspossible within the desired tolerance of the grid wavelengths for eachlaser source 12. This adjustment can be made either by adjusting thecurrent or bias of the laser source or by adjusting the current or biasto local heaters approximate to each laser source 12, or the applicationof both, as taught in the previously incorporated patent applications.

[0027] Likewise, an extra output port which contains all channels can betransmitted on a second fiber in a 1+1 protection scenario. This wouldbe especially valuable in a fiber ring protection, where duplicates ofall channel signals are simultaneously sent clockwise andcounterclockwise from each terminal point within a fiber ring.

[0028] Output 59 provides the multiplexed groups of output channelsignals from combiner 56 to a comparatively lower performance opticalamplifier 60 providing gain spectrally across the multiplexed signalsprior to launching the same, via fiber 62, onto a fiber link or span.Optical amplifier 60 may be any amplifier capable of amplifying acrossthe spectral band width of all of the multiplexed signals present online 59. Examples of amplifiers 60 are rare earth fiber amplifiers andsemiconductor optical amplifiers (SOAs). The preferred embodiments arean erbium doped fiber amplifier (EDFA), or a group of SOAs orconcatenated SOAs which provide sufficient output power to provide anadequate gain level to the multiplexed signals on line 59. Inparticular, the SOAs may be comprised of one or more laser amplifiers,such as one or more gain clamped-SOAs. The advantage of these types ofSOA devices is that they are small and compact compared with fiberamplifiers. For higher gain requirements, plural SOAs can beconcatenated in line 59. The type of EDFA deployed need no be a highperformance EDFA, i.e., it need not be multiple stage or have multiplelaser pumps as in the case of a mid-span, bidirectional EDFA systemcomprising several such fiber amplifiers and multiple laser pumps. Thelow cost EDFA may include a few meters of active rare earth doped fiberand a single laser pump. An advantage of deploying such an opticalamplifier 60 is that a lower cost optical combiner may be deployed at 56rather than deploying a more expensive wavelength selective multiplexeror interleaver with bandguards. While the insertion loss of opticalcombiner 56 is higher, the low performance, inexpensive opticalamplifier 60 provides sufficient gain to properly complement themultiplexed signals on line 59 to compensate for such high opticalinsertion losses and provide the multiplexed signals with sufficientgain for launching on an optical transport network.

[0029] Another advantage of deploying optical amplifier 60 is toeliminate the need for integrated, on-chip amplification in TxPIC chips10, such as integrated SOAs positioned between the outputs of modulators14 and optical combiner 17 or 18. Therefore, the number of requiredon-chip active optical components is reduced thereby lowering on-chippower consumption by as much as 40% and, correspondingly, the amount ofon-chip heat generated that must be carried away off-chip. Thus, thepower and thermal budgets of TxPIC chip 10 may be lowered to moreacceptable limits and the number of output pads from the chip isreduced. Also, possible optical and/or thermal interactions of on-chipoptical amplifiers with other on-chip active optical components, suchthe laser sources and the EO modulators, are eliminated. On-chip SOAscan bring about two-photon absorption (TPA) possibly occurring in theoptical combiner 17 or 18 if the optical path is sufficiently long, viathe optical combiner, to permit TPA introduction. Thus, without on-chipSOA deployment, TPA need not be an issue. Also, the launch power perchannel is set by the booster optical amplifier rather than via anyon-chip amplifiers so that the total launch power for all channels canbe adjusted to meet the different loss requirements of different highloss single mode fiber (SMF) optical spans. Finally, without the need ofintegrated on-chip optical amplifiers means that there will be nodegradation of the modulator extinsion ratio and any ASE noise feedbackif such devices are present on the chip.

[0030] As a specific example, in a typical signal channel of TxPIC chip10, the loss/gain from laser source 12 to booster amplifier 60 may be asfollows: TABLE 1 DFB Laser EA Modulator Optical Optical 12 14 AWG 18combiner 56 Amplifier 60 Gain/Loss — 11 dB 6 dB 11 dB Accumulated +3 dBm−8 dBm −14 dBm −25 dBm −2 dBm/ch Loss

[0031] The power figures shown in Table 1 are the power per channel forthe worst case channel after signal passage via each optical componentin an optical channel path through chip 10, optical combiner 56 andbooster optical amplifier 60.

[0032] As indicated above, two primary advantages of eliminating on-chipsemiconductor amplifiers, such as SOAs, on TxPIC chip 10 are thesimplification of the overall PIC structure and the reduced heat loadpresent on the multi-channel PIC chip. As an example, if atwelve-channel TxPIC is assumed and a value of 200 mA is driving eachin-line SOA in each of the twelve channel paths on the chip, theelimination of the PIC SOAs eliminates approximately 2.4 A of totaldrive current on the PIC module, which is a large source of heat on thechip.

[0033] Also, as indicated above, the elimination of on-chip opticalamplifiers eliminates any two-photon absorption (TPA) effects associatedwith the AWG component on the TxPIC chip 10. As a specific example,instead of +8 dBm per channel amplification entering an AWG 18 withon-chip channel amplification, the value entering the AWG is −8 dBm perchannel. TPA in the AWG has been shown to occur and will probably limitthe power per channel that can be launched into an optical span or fiberlink. Likewise, the output power of an on-chip SOA and the proper choiceof operating point on the gain saturation curve will limit the power perchannel to a value of about −2.5 dBm. As indicated previously, anon-chip optical amplifier operating point sufficiently removed from gainsaturation is necessary to insure that the extinction ratio of the EOmodulator is not degraded.

[0034] As just mentioned above, the launched power per channel may becurrently limited to approximately −2.5 dBm/channel, which arises fromlimitations in the properties of the on-chip booster SOAs (saturationpower and gain shape) and nonlinear effects in AWG 18. More latitude isdesired in launched channel powers for addressing different types ofsingle mode fiber (SMF) links. It is feasible that per channel powers of0 dBm will be desired to adequately address 25 dB loss, or higher, spansof SMF. Thus, the launch power per channel can be set by booster opticalamplifier 60 which is not limited in launched power and overcomes theloss problems of current SMF links. The higher dispersion and largereffective area of SMF fiber, and perhaps E-LEAF fiber, will allow higherper channel powers to be launched. A higher power booster amplifiercould be used for SMF links while a lower power booster amplifier couldbe used for NZDSF types of fibers.

[0035] As previously indicated, the deployment of optical combiner 56 inthis invention has several advantages. There will be no passband issuesassociated with highly selective multiplexing elements such asinterleavers. There will also be no multiplexer elements, such asred/blue dichroic filters, that have guard bands and, hence, the passiveoptical combiner elements will lead to the highest spectral efficiencywithin any gain band. The extra input ports (until full semiconductorPIC chip population is reached in a transmitter communication module)may be used for sparing, hot swapping, or protection.

[0036] Reference is now made to FIG. 4, which is much the same as FIG. 3except that an N×1 optical combiner 54 is shown in place of N×2 opticalcombiner 56 in FIG. 3, and also a power combiner 17 of the broadbandwidth spectral wavelength type is shown in the architecture of TxPICchip 10 instead of a wavelength selective combiner 18. Optical combiner17, for example, may be a star coupler or a MMI coupler. In the casehere, power combiner 17 brings about more insertion loss than awavelength selective type of combiner 18 so that the deployment of anoff-chip booster optical amplifier 60 becomes a more important factorwhether there is a single TxPIC chip 10 or multiple TxPIC chips 10. Theadvantage of this approach is principally two-fold in that a lessexpensive TxPIC chip 10 can be deployed, which is less expensive since amore complex fabricated, wavelength selective multiplexer 18 issubstituted with a lower cost optical combiner 17 with higher insertionlosses which can be compensated for with a low cost, low performanceoff-chip booster optical amplifier 60. Third, a low cost opticalcombiner 54 can be deployed having higher losses than awavelength-selective type multiplexer for combining several outputs 50from multiple TxPIC chips 10.

[0037] Reference is now made to FIG. 5 comprising Parts 1 and 2 (FIGS.5A and 5B respectively). FIG. 5 is similar to FIG. 4 except that thereare shown two spectral groups of TxPIC chips 10 respectively operatingin the C and L bands of wavelength channels. It is within the scope ofthis invention to operate in other bands that can be gain-covered bybooster optical amplifiers 60, such as the S-band. In the C band, asshown in FIG. 5A, chips 10C each have laser sources 12C with operationalwavelengths within the C band and corresponding integrated opticalcomponents comprising EO modulators 14C, coupling waveguides 18C,optical combiner 17C and output waveguide 26C. In the L band, as shownin FIG. 5B, chips 10L each have laser sources 12L with operationalwavelengths within the L band and corresponding integrated opticalcomponents comprising EO modulators 14L, coupling waveguides 18L,optical combiner 17L and output waveguide 26L. Combiners 17C and 17L maybe a power combiner, such as a star coupler or an MMI coupler, or may bea wavelength selective combiner 18, such as an Echelle grating or anAWG. The outputs from each TxPIC chip 10 in the C or L band are combinedvia optical combiner 54A or 54B, respectively, and their respectiveoutputs are placed on lines 59A and 59B respectively to C-band andL-band booster optical amplifiers 60A and 60B, which amplifiers may alsobe C+L booster optical amplifiers. The amplified C and L band signalsare then combined by C/L dichroic combiner 64 for placement on fiber 66to be launched on the optical link or span.

[0038] Thus, in general, the deployment of optical passive combiner 54or 56 in combination with booster optical amplifiers 60 shifts theprocurement emphasis away from the presently immature and costlywavelength selective types of multiplexers, such as multi-portinterleavers and custom red/blue dichroic filters, and towardprocurement of mature, high-volume, low cost EDFA components and lowcost optical passive combiners that are not wavelength selective but arelass expensive, broad bandwidth spectral power combiners. These areimportant features of this invention.

[0039] While the invention has been described in conjunction withseveral specific embodiments, it is evident to those skilled in the artthat many further alternatives, modifications and variations will beapparent in light of the foregoing description. For example, a TxPICchip 10 has been the exemplary example in the description of theapplication if this invention. However, such an optical amplifier 60 canalso be deployed at the input of a semiconductor monolithic receiverphotonic integrated circuit (RxPIC) chip of the type disclosed in U.S.patent application Ser. No. 10/267,304, which application isincorporated herein by its reference. By deploying such an amplifierwith such an optical receiver semiconductor chip, the use of on-chipamplifiers, such as SOAs or semiconductor laser amplifiers, such asgain-clamped-semiconductor optical amplifier (GC-SOAs), is not necessarywhich has the general advantages as already pointed out herein relativeto the TxPIC chip example. Thus, the invention described herein isintended to embrace all such alternatives, modifications, applicationsand variations as may fall within the spirit and scope of the appendedclaims.

What is claimed is:
 1. An optical communication system comprising: aplurality of monolithic semiconductor transmitter photonic integratedcircuit (TxPIC) chips each having a plurality of multi-wavelengthchannel signal sources comprising: a plurality of light sources, thepeak wavelengths of light signals emitted by the light sources beingdifferent from each other; a plurality of electro-optical modulatorseach optically connected to one of the light sources and modulating itsrespective light signal; an optical combiner coupled to receive all ofthe outputs from the electro-optical modulators for multiplexing all ofthe modulated light signals and providing a combined multi-wavelengthsignal output; an N×1 optical combiner optically coupled to receive themulti-wavelength signal output of the TxPIC chips and combining theminto a single signal output; and a booster amplifier coupled to receiveand amplify the N×1 optical combiner output and launched the same ontoan optical transmission medium.
 2. The optical communication system ofclaim 1 wherein the optical combiner is an N×2 combiner, the additionaloutput from the optical combiner coupled to a wavelength locker forproviding feedback to the laser sources for locking the peak wavelengthsof the laser sources to a desired wavelength of operation.
 3. Theoptical communication system of claim 1 wherein each of themulti-frequency signal sources is deployed as a photonic integratedcircuit on a single monolithic chip or module.
 4. The opticalcommunication system of claim 1 wherein the laser sources are DFB lasersor DBR lasers.
 5. The optical communication system of claim 1 whereinthe electro-optical modulators are electro-absorption modulators orMach-Zehnder modulators.
 6. The optical communication system of claim 1wherein the booster amplifier comprises a rare earth doped fiberamplifier.
 7. The optical communication system of claim 6 wherein therare earth doped fiber amplifier is an EDFA.
 8. The opticalcommunication system of claim 7 wherein the EDFA is an L band, C band oran L+C band amplifier.
 9. The optical communication system of claim 1wherein a first group of said multi-wavelength channel signal sourcesoperate in the C-band and a second group of said multi-wavelengthchannel signal sources operate in the L-band, a first optical combinerto receive the combined outputs from the first group and combine into aC-band signal and a second optical combiner to receive the combinedoutputs from the second group and combine them into a L-band signal,first and second booster optical amplifiers respectively coupled toreceive said C-band signal and said L-band signal to amplify the same,and a C+L band optical combiner coupled to receive and optically combinesaid amplified C-band and L-band signals for launching the combined C+Lband signal onto an optical transmission medium.
 10. The opticalcommunication system of claim 9 wherein said C+L band optical combineris a C/L band dichroic combiner.
 11. The optical communication system ofclaim 9 wherein said first and second booster optical amplifiers areoptical fiber amplifiers or semiconductor optical amplifiers.
 12. Theoptical communication system of claim 11 wherein said optical fiberamplifiers are erbium doped fiber amplifiers (EDFAs).
 13. An opticalcommunication system comprising: a plurality of monolithic semiconductortransmitter photonic integrated circuit (TxPIC) chips that each have aplurality of integrated different wavelength channel signal sources andprovide a plurality of modulated output channel signals; an integratedoptical combiner in each TxPIC chip that receives the modulated outputchannel signals to combine them combined multi-wavelength signal output;an N×1 optical combiner that receives the multi-wavelength signal outputof the TxPIC chips and combines them into a single signal output; and anoff-chip booster amplifier that receives and amplifies themulti-wavelength signal output.
 14. The optical communication system ofclaim 13 wherein said TxPIC chips include an array of modulated sources.15. The optical communication system of claim 14 wherein said modulatedsources comprise an array of directly modulated laser sources.
 16. Theoptical communication system of claim 15 wherein said modulated sourcescomprise an array of laser sources and an array of electro-opticmodulators.
 17. The optical communication system of claim 16 whereinsaid laser sources are DFB lasers or DBR lasers and said electro-opticmodulators are Mach-Zehnder modulators or electro-absorption modulators.18. The optical communication system of claim 13 wherein said opticalcombiner is selected from the group consisting of an arrayed waveguidegrating, an Echelle grating, multi-mode interference (MMI) coupler or astar coupler.
 19. The optical communication system of claim 13 whereinsaid booster amplifier is an optical fiber amplifier.
 20. The opticalcommunication system of claim 19 wherein said optical fiber amplifier isan erbium doped fiber amplifier (EDFA).